 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF326/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. * Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts Minimum Gain = 9.0 dB * Built-In Matching Network for Broadband Operation * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 4.5 6.0 110 0.63 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C MRF326 40 W, 225 to 400 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.6 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 40 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 4.0 mAdc, IC = 0) Collector-Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.0 60 -- -- -- -- -- -- -- -- -- -- 4.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE 20 50 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 45 60 pF NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF326 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc) Collector Efficiency (VCC = 28 Vdc, Pout = 40 W, f = 400 MHz, IC Max = 2.85 Adc) Load Mismatch (VCC = 28 Vdc, Pout = 40 W CW, f = 400 MHz, VSWR = 30:1 All Phase Angles) GPE No Degradation in Output Power 9.0 50 11 -- -- -- dB % R1 C9 L2 R3 C13 L1 DUT RF INPUT Z1 Z2 L4 L3 L5 C11 + C10 + 28 Vdc - C7 Z3 Z4 RF OUTPUT R2 C1 C2 C3 C4 C12 C5 C6 C8 C1 -- 1.0 - 10 pF Johanson, Capacitor (JMC 5201) C2, C3, C6, C8 -- 1.0- 20 pF Johanson Capacitor C4, C5 -- 36 pF ATC "B" Style Chip Capacitor C7, C9, C13 -- 100 pF UNELCO Capacitor C11 -- 680 pF Feedthru C10 -- 1.0 F 50 V Tantalum C12 -- 0.1 F Erie Redcap L1 -- 8 Turns #26 AWG Enameled, 1/16 ID Closewound L2, L5 -- Ferroxcube VK200-19/4B Ferrite Choke L3 -- 8 Turns #20 AWG Enameled, 1/4 ID Closewound L4 -- 4 Turns #26 AWG 0.1 ID R1 -- 10 Ohm 2.0 W Carbon R2, R3 -- 10 Ohm 1.0 W Carbon Z1 -- Microstrip 0.19 W x 1.28 L Z2 -- Microstrip 0.28 W x 1.0 L Z3 -- Microstrip 0.31 W x 1.0 L Z4 -- Microstrip 0.31 W x 0.9 L Board -- Glass Teflon r = 2.56 t = 0.062 Input/Output Connectors -- Type N UG58 A/U Figure 1. 400 MHz Test Amplifier MRF326 2 MOTOROLA RF DEVICE DATA 50 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 225 MHz 400 MHz 50 Pin = 3.8 W 2.6 W 40 40 30 30 1.8 W 20 20 10 VCC = 28 V 0 0 1 2 3 4 5 10 f = 225 MHz 0 10 14 18 22 26 30 Pin, INPUT POWER (WATTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 50 Pout , OUTPUT POWER (WATTS) Pin = 4.3 W 40 2.8 W 2W 30 20 10 0 10 14 18 22 26 30 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage f = 400 MHz MOTOROLA RF DEVICE DATA MRF326 3 0 5 f = 225 MHz 5 400 350 f = 225 MHz ZOL* 400 5 10 Zin 10 350 10 VCC = 28 V, Po = 40 W f MHz Zin Ohms 0.75 + j2.3 4.6 + j2.1 1.3 + j0.9 ZOL* Ohms 3.5 - j2.3 3.2 - j0.8 3.7 + j0 15 225 350 400 20 25 30 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 5. Series Equivalent Input-Output Impedance MRF326 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS D R 3 F 4 K NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 1 Q 2 L B J E N H A U STYLE 1: PIN 1. 2. 3. 4. C DIM A B C D E F H J K L N Q R U EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D MOTOROLA RF DEVICE DATA MRF326 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF326 6 *MRF326/D* MRF326/D MOTOROLA RF DEVICE DATA |
Price & Availability of MRF326
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |